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IKP15N60T trenchstop series q power semiconductors 1 rev. 2.1 may 06 low loss duopack : igbt in trench and fieldstop technology with soft, fast recovery anti-parallel emcon he diode ? very low v ce(sat) 1.5 v (typ.) ? maximum junction temperature 175 c ? short circuit withstand time ? 5 s ? designed for : - frequency converters - uninterrupted power supply ? trench and fieldstop technology for 600 v applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed ? positive temperature coefficient in v ce(sat) ? low emi ? pb-free lead plating; rohs compliant ? very soft, fast recovery anti-parallel emcon he diode ? qualified according to jedec 1 for target applications ? complete product spectrum and pspice models : http://www.infineon.com/igbt/ type v ce i c v ce(sat ),tj=25c t j,max marking code package IKP15N60T 600v 15a 1.5v 175 c k15t60 pg-to-220-3-1 maximum ratings parameter symbol value unit collector-emitter voltage v ce 600 v dc collector current, limited by t jmax t c = 25 c t c = 100 c i c 30 15 pulsed collector current, t p limited by t jmax i cpuls 45 turn off safe operating area ( v ce 600v, t j 175 c) - 45 diode forward current, limited by t jmax t c = 25 c t c = 100 c i f 30 15 diode pulsed current, t p limited by t jmax i fpuls 45 a gate-emitter voltage v ge 20 v short circuit withstand time 2) v ge = 15v, v cc 400v, t j 150 c t sc 5 s power dissipation t c = 25 c p tot 130 w operating junction temperature t j -40...+175 storage temperature t stg -55...+175 soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s 260 c 1 j-std-020 and jesd-022 2) allowed number of short circuits: <1000; time between short circuits: >1s. g c e pg-to-220-3-1
IKP15N60T trenchstop series q power semiconductors 2 rev. 2.1 may 06 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc 1.15 diode thermal resistance, junction ? case r thjcd 1.9 thermal resistance, junction ? ambient r thja 62 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.2ma 600 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =15a t j =25 c t j =175 c - - 1.5 1.9 2.05 - diode forward voltage v f v ge =0v, i f =15a t j =25 c t j =175 c - - 1.65 1.6 2.05 - gate-emitter threshold voltage v ge(th) i c =210a, v ce = v ge 4.1 4.9 5.7 v zero gate voltage collector current i ces v ce =600v , v ge =0v t j =25 c t j =175 c - - - - 40 1000 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =15a - 8.7 - s integrated gate resistor r gint - ? dynamic characteristic input capacitance c iss - 860 - output capacitance c oss - 55 - reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 24 - pf gate charge q gate v cc =480v, i c =15a v ge =15v - 87 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 7 - nh short circuit collector current 1) i c(sc) v ge =15v, t sc 5 s v cc = 400v, t j 150 c - 137.5 - a 1) allowed number of short circuits: <1000; time between short circuits: >1s.
IKP15N60T trenchstop series q power semiconductors 3 rev. 2.1 may 06 switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 17 - rise time t r - 11 - turn-off delay time t d(off) - 188 - fall time t f - 50 - ns turn-on energy e on - 0.22 - turn-off energy e off - 0.35 - total switching energy e ts t j =25 c, v cc =400v, i c =15a, v ge =0 /15v, r g =15 ? , l 1) =154nh, c 1) =39pf energy losses include ?tail? and diode reverse recovery. - 0.57 - mj anti-parallel diode characteristic diode reverse recovery time t rr - 34 - ns diode reverse recovery charge q rr - 0.24 - c diode peak reverse recovery current i rrm - 10.4 - a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =25 c, v r =400v, i f =15a, di f /dt =825a/ s - 718 - a/ s switching characteristic, inductive load, at t j =175 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) - 17 - rise time t r - 15 - turn-off delay time t d(off) - 212 - fall time t f - 79 - ns turn-on energy e on - 0.34 - turn-off energy e off - 0.47 - total switching energy e ts t j =175 c, v cc =400v, i c =15a, v ge =0/15v, r g = 15 ? l 1) =154nh, c 1) =39pf energy losses include ?tail? and diode reverse recovery. - 0.81 - mj anti-parallel diode characteristic diode reverse recovery time t rr - 140 - ns diode reverse recovery charge q rr - 1.0 - c diode peak reverse recovery current i rrm - 14.7 - a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =175 c v r =400v, i f =15a, di f /dt =825a/ s - 495 - a/ s 1) leakage inductance l a nd stray capacity c due to dynamic test circuit in figure e.
IKP15N60T trenchstop series q power semiconductors 4 rev. 2.1 may 06 i c , collector current 10hz 100hz 1khz 10khz 100khz 0a 10a 20a 30a 40a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a 10s 50s 1ms dc t p =2s 10ms f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency ( t j 175 c, d = 0.5, v ce = 400v, v ge = 0/+15v, r g = 15 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t j 175 c; v ge =15v) p tot , power dissipation 25c 50c 75c 100c 125c 150c 0w 20w 40w 60w 80w 100w 120w i c , collector current 25c 75c 125c 0a 10a 20a 30a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 175 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 175 c) i c i c
IKP15N60T trenchstop series q power semiconductors 5 rev. 2.1 may 06 i c , collector current 0v 1v 2v 3v 0a 5a 10a 15a 20a 25a 30a 35a 40a 15v 7v 9v 11v 13v v ge =20v i c , collector current 0v 1v 2v 3v 0a 5a 10a 15a 20a 25a 30a 35a 4 0a 15v 7v 9v 11v 13v v ge =20v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristic ( t j = 25c) figure 6. typical output characteristic ( t j = 175c) i c , collector current 0v 2v 4v 6v 8v 0a 5a 10a 15a 20a 25a 30a 35a 25c t j =175c v ce(sat), collector - emitt saturation voltage 0c 50c 100c 150c 0.0v 0.5v 1.0v 1.5v 2.0v 2.5v i c =15a i c =30a i c =7.5a v ge , gate-emitter voltage t j , junction temperature figure 7. typical transfer characteristic (v ce =20v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v)
IKP15N60T trenchstop series q power semiconductors 6 rev. 2.1 may 06 t, switching times 0a 5a 10a 15a 20a 25a 1ns 10ns 100ns t r t d(on) t f t d(off) t, switching times 10? 20? 30? 40? 50? 10ns 100ns t r t d(on) t f t d(off) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j =175c, v ce = 400v, v ge = 0/15v, r g = 15 ? , dynamic test circuit in figure e) figure 10. typical switching times as a function of gate resistor (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, i c = 15a, dynamic test circuit in figure e) t, switching times 25c 50c 75c 100c 125c 150c 10ns 100ns t r t d(on) t f t d(off) v ge(th ) , gate - emitt trshold voltage -50c 0c 50c 100c 150c 0v 1v 2v 3v 4v 5v 6v 7v min. typ. max. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/15v, i c = 15a, r g =15 ? , dynamic test circuit in figure e) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 0.21ma)
IKP15N60T trenchstop series q power semiconductors 7 rev. 2.1 may 06 e , switching energy losses 0a 5a 10a 15a 20a 25a 0.0mj 0.4mj 0.8mj 1.2mj 1.6mj e ts * e off *) e on and e ts include losses due to diode recovery e on * e , switching energy losses 0? 10? 20? 30? 40? 50? 60? 70? 80? 0.2 mj 0.4 mj 0.6 mj 0.8 mj 1.0 mj 1.2 mj 1.4 mj 1.6 mj e ts * e on * *) e on and e ts include losses due to diode recovery e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, r g = 15 ? , dynamic test circuit in figure e) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j = 175c, v ce = 400v, v ge = 0/15v, i c = 15a, dynamic test circuit in figure e) e , switching energy losses 25c 50c 75c 100c 125c 150c 0.2mj 0.3mj 0.4mj 0.5mj 0.6mj 0.7mj 0.8mj 0 . 9 m j e ts * e on * *) e on and e ts include losses due to diode recovery e off e , switching energy losses 300v 350v 400v 450v 0.0mj 0.2mj 0.4mj 0.6mj 0.8mj 1.0mj 1 . 2 m j e ts * e on * *) e on and e ts include losses due to diode recovery e off t j , junction temperature v ce , collector - emitter voltage figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/15v, i c = 15a, r g = 15 ? , dynamic test circuit in figure e) figure 16. typical switching energy losses as a function of collector emitter voltage (inductive load, t j = 175c, v ge = 0/15v, i c = 15a, r g = 15 ? , dynamic test circuit in figure e)
IKP15N60T trenchstop series q power semiconductors 8 rev. 2.1 may 06 v ge , gate - emitter voltage 0nc 20nc 40nc 60nc 80nc 100nc 0v 5v 10v 15v 480v 120v c, capacitance 0v 10v 20v 30v 40v 50v 10pf 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17. typical gate charge ( i c =15 a) figure 18. typical capacitance as a function of collector-emitter voltage ( v ge =0v, f = 1 mhz) i c ( sc ) , short circuit collector current 12v 14v 16v 18v 0a 50a 100a 150a 200a t sc , short circuit withstand time 10v 11v 12v 13v 14v 0s 2s 4s 6s 8s 10s 12s v ge , gate - emittetr voltage v ge , gate - emitetr voltage figure 19. typical short circuit collector current as a function of gate- emitter voltage ( v ce 400v, t j 150 c) figure 20. short circuit withstand time as a function of gate-emitter voltage ( v ce =600v , start at t j = 25c, t jmax <150c)
IKP15N60T trenchstop series q power semiconductors 9 rev. 2.1 may 06 z thjc , transient thermal resistance 1 s10 s100 s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w 10 0 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 z thjc , transient thermal resistance 1 s10 s 100 s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w 10 0 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 t p , pulse width t p , pulse width figure 21. igbt transient thermal resistance ( d = t p / t ) figure 22. diode transient thermal impedance as a function of pulse width ( d = t p / t ) t rr , reverse recovery time 400a/s 600a/s 800a/s 0ns 40ns 80ns 120ns 160ns 200ns t j =25c t j =175c q rr , reverse recovery charge 400a/s 600a/s 800a/s 0.0c 0.2c 0.4c 0.6c 0.8c 1.0c t j =25c t j =175c di f /dt , diode current slope di f /dt , diode current slope figure 23. typical reverse recovery time as a function of diode current slope ( v r =400v, i f =15a, dynamic test circuit in figure e) figure 24. typical reverse recovery charge as a function of diode current slope ( v r = 400v, i f = 15a, dynamic test circuit in figure e) r ,(k/w) , (s) 0.06991 1.11*10 -1 6 0.43036 2.552*10 -2 0.53839 3.914*10 -3 0.58718 4.92*10 -4 0.23695 7.19*10 -5 0.03700 7.4*10 -6 c 1 = 1 r 1 r 1 r 2 c 2 = 2 r 2 r ,(k/w) , (s) 0.13265 5.67*10 -2 0.37007 1.558*10 -2 0.30032 2.147*10 -3 0.34701 2.724*10 -4 c 1 = 1 r 1 r 1 r 2 c 2 = 2 r 2
IKP15N60T trenchstop series q power semiconductors 10 rev. 2.1 may 06 i rr , reverse recovery current 400a/s 600a/s 800a/s 0a 2a 4a 6a 8a 10a 12a 14a 16a t j =25c t j =175c d i rr /dt , diode peak rate of fall of reverse recovery current 400a/s 600a/s 800a/s 0a/s -100a/s -200a/s -300a/s -400a/s -500a/s -600a/s -700a/s t j =25c t j =175c di f /dt , diode current slope di f /dt , diode current slope figure 25. typical reverse recovery current as a function of diode current slope ( v r = 400v, i f = 15a, dynamic test circuit in figure e) figure 26. typical diode peak rate of fall of reverse recovery current as a function of diode current slope ( v r =400v, i f =15a, dynamic test circuit in figure e) i f , forward current 0v 1v 2v 0a 10a 20a 30a 40a 175c t j =25c v f , forward voltage 0c 50c 100c 150c 0.0v 0.5v 1.0v 1.5v 2.0v 15a i f =30a 7.5a v f , forward voltage t j , junction temperature figure 27. typical diode forward current as a function of forward voltage figure 28. typical diode forward voltage as a function of junction temperature
IKP15N60T trenchstop series q power semiconductors 11 rev. 2.1 may 06 pg-to-220-3-1
IKP15N60T trenchstop series q power semiconductors 12 rev. 2.1 may 06 figure a. definition of switching times figure b. definition of switching losses i rrm 90% i rrm 10% i rrm di /dt f t rr i f i,v t q s q f t s t f v r di /dt rr q=q q rr s f + t=t t rr s f + figure c. definition of diodes switching characteristics p(t) 12 n t(t) j 1 1 2 2 figure d. thermal equivalent circuit figure e. dynamic test circuit leakage inductance l =60nh a n d stray capacity c =40pf.
IKP15N60T trenchstop series q power semiconductors 13 rev. 2.1 may 06 edition 2006-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 5/8/06. all rights reserved. attention please! the information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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